91. Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides
Xinglu Wang,Yaoqiao Hu, Seong Yeoul Kim, Rafik Addou, Kyeongjae Cho, and Robert M. Wallace. ACS Nano, 2023
https://doi.org/10.1021/acsnano.3c06494
https://doi.org/10.1021/acsnano.3c06494
90. Ambient Pressure X-Ray Photoelectron Study on the Thermal Decomposition of Acetic Acid on Pd(111)
Hoan K.K. Nguyen, Rafik Addou, Kingsley C. Chukwu, Gregory S. Herman, and Líney Árnadóttir
J. Phys. Chem. C 2023, 127, 24, 11472–11480
89. Synthesis of Micron-Sized WS2 Crystallites Using Atomic Layer Deposition and Sulfur Annealing
88. Defects in Two-Dimensional Materials
87. Nb2O5, LiNbO3, and (Na, K)NbO3 Thin Films from High-Concentration Aqueous Nb-Polyoxometalates
T. Rahman, N. P. Martin, J. K. Jenkins, R. Elzein, D. B. Fast, R. Addou, G. S. Herman, and M. Nyman
Kamesh Mullapudi, Rafik Addou, Charles. L. Dezelah, Daniel F. Moser, Ravindra K. Kanjolia, Jacob H. Woodruff, and John. F. Conley Jr. Chem. Mater. 2023, 35, 12, 4649-4659
88. Defects in Two-Dimensional Materials
1st Edition - March 1, 2022
Editors: Rafik Addou, Luigi Colombo ISBN: 9780128202920
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87. Nb2O5, LiNbO3, and (Na, K)NbO3 Thin Films from High-Concentration Aqueous Nb-Polyoxometalates
T. Rahman, N. P. Martin, J. K. Jenkins, R. Elzein, D. B. Fast, R. Addou, G. S. Herman, and M. Nyman
heterostructures
J. Lee, P. Adiga, S. A. Lee, S. H. Nam, H.-A. Ju, M.-H. Jung, H. Y. Jeong, Y.-M. Kim, C. Wong, R. Elzein, R. Addou, K. A. Stoerzinger, W. S. Choi, Small 2103632 (2021).
85. Molecular-scale investigation of the oxidation behavior of chromia-forming alloys in high-temperature CO2
Richard P. Oleksak, Rafik Addou, Bharat Gwalani, John P. Baltrus, Tao Liu, J. Trey Diulus, Arun Devaraj, Gregory S. Herman, and Ömer N. Doğan
npj Mater Degrad 5, 46 (2021)84. Operando Study of the Preferential Growth of SiO2 During the Dry Thermal Oxidation of Si0.60Ge0.40(001) by Ambient Pressure X-ray Photoelectron Spectroscopy.
Shane P. Lorona, J. Trey Diulus, Jo E. Bergevin, Rafik Addou, Gregory S. Herman
Journal of Vacuum Science and Technology A 39, 053202 (2021)
83. Enhanced Visible-Light-Driven Hydrogen Production through MOF/MOF Heterojunctions
Journal of Vacuum Science and Technology A 39, 053202 (2021)
83. Enhanced Visible-Light-Driven Hydrogen Production through MOF/MOF Heterojunctions
Stavroula Kampouri, Fatmah M. Ebrahim, Maria Fumanal, Makenzie Nord, Pascal A. Schouwink, Radwan Elzein, Rafik Addou, Gregory S. Herman, Berend Smit, Christopher P. Ireland, and Kyriakos C. Stylianou
ACS Appl. Mater. Interfaces 2021, 13, 12, 14239–14247
ACS Appl. Mater. Interfaces 2021, 13, 12, 14239–14247
82. Modification of the Electronic Transport in Atomically Thin WSe2 by Oxidation
Y.-C. Lin, B. M. Bersch, R. Addou, K. Xu, Q. Wang, C. M. Smyth, B. Jariwala, R. C. Walker II, S. K. Fullerton-Shirey, M. J. Kim, R. M. Wallace, and J. A. Robinson
Adv. Mater. Interfaces 2000422 (2020)
81. Atomically Controlled Tunable Doping in High-Performance WSe2 Devices
C-S. Pang, T. Y. T. Hung, A. Khosravi, R. Addou, Q. Wang, M. J. Kim, R. M. Wallace, and Z. Chen
Adv. Electron. Mater. 2020, 1901304 June 21, 2020
80. Origins of Fermi Level Pinning Between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
Christopher M. Smyth, Rafik Addou, Christopher L Hinkle, and Robert M. Wallace https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.0c01646 June 11, 2020
79. Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices with > 10^8 On/Off Ratio
C-S. Pang, T.Y.T. Hung, A.Khosravi, R.Addou, R.M. Wallace, and Z. Chen, IEEE Electron Device Letters, 41 (7) 1122-1125 (2020)
78. Light soaking in metal halide perovskites studied via steady-state microwave conductivity
C Lowell Watts, Lee Aspitarte, Yen-Hung Lin, Wen Li, Radwan Elzein, Rafik Addou, Min Ji Hong, Gregory S. Herman, Henry J. Snaith & John G. Labram
Communications Physics 3 (73) (2020)
77. In situ exfoliated 2D Molybdenum Disulfide Analyzed by XPS
Xinglu Wang, Christopher R. Cormier, Ava Khosravi, Christopher M. Smyth, Jeffrey R. Shallenberger, Rafik Addou, and Robert M. Wallace
Surface Science Spectra 27, 014019 (2020)
https://doi.org/10.1116/6.0000153
76. Effect of Ambient Conditions on Organotin EUV Photoresist Radiation Chemistries
Diulus, J. Trey; Frederick, Ryan; Hutchison, Danielle; Lyubinetsky, Igor; Addou, Rafik; Nyman, May; Herman, Gregory
ACS Appl. Nano Mater. 3, 3, 2266-2277 (2020)
A. Kozhakhmetov, J. Nasr, Joseph; F. Zhang, K. Xu, N. Briggs, R. Addou, R. Wallace, S. K. Fullerton-Shirey, M. Terrones, S. Das, J. Robinson, 2D Mater. 2D Mater. 7 015029 (2020). Read it
72. 2-D Bismuth Telluride Analyzed by XPS
J. R. Shallenberger, C. M. Smyth, R.Addou, R. M. Wallace
Surf. Sci. Spectra 26, 024011 (2019) Read it
71. Surface and Interfacial Study of Atomic Layer Deposited Al2O3 on MoTe2 and WTe2
70. Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3
Adv. Mater. Interfaces 2000422 (2020)
81. Atomically Controlled Tunable Doping in High-Performance WSe2 Devices
C-S. Pang, T. Y. T. Hung, A. Khosravi, R. Addou, Q. Wang, M. J. Kim, R. M. Wallace, and Z. Chen
Adv. Electron. Mater. 2020, 1901304 June 21, 2020
80. Origins of Fermi Level Pinning Between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment
Christopher M. Smyth, Rafik Addou, Christopher L Hinkle, and Robert M. Wallace https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.0c01646 June 11, 2020
C-S. Pang, T.Y.T. Hung, A.Khosravi, R.Addou, R.M. Wallace, and Z. Chen, IEEE Electron Device Letters, 41 (7) 1122-1125 (2020)
78. Light soaking in metal halide perovskites studied via steady-state microwave conductivity
C Lowell Watts, Lee Aspitarte, Yen-Hung Lin, Wen Li, Radwan Elzein, Rafik Addou, Min Ji Hong, Gregory S. Herman, Henry J. Snaith & John G. Labram
Communications Physics 3 (73) (2020)
77. In situ exfoliated 2D Molybdenum Disulfide Analyzed by XPS
Xinglu Wang, Christopher R. Cormier, Ava Khosravi, Christopher M. Smyth, Jeffrey R. Shallenberger, Rafik Addou, and Robert M. Wallace
Surface Science Spectra 27, 014019 (2020)
https://doi.org/10.1116/6.0000153
Diulus, J. Trey; Frederick, Ryan; Hutchison, Danielle; Lyubinetsky, Igor; Addou, Rafik; Nyman, May; Herman, Gregory
ACS Appl. Nano Mater. 3, 3, 2266-2277 (2020)
75. Surface Chemistry of 2-Propanol and O2 Mixtures on SnO2(110) Studied with Ambient-Pressure X-ray Photoelectron Spectroscopy
J. Trey Diulus, Radwan Elzein, Rafik Addou, and Gregory Herman. J. Chem. Phys. 152, 054713 (2020)
J. Trey Diulus, Radwan Elzein, Rafik Addou, and Gregory Herman. J. Chem. Phys. 152, 054713 (2020)
74. 2D Topological insulator Bismuth Selenide Analyzed by in situ XPS
X. Wang, C. M. Smyth, A. Khosravi, C. R. Cormier, J. R. Shallenberger, R. Addou, and R. M. Wallace. Surf. Sci. Spectra 26, 024014 (2019) Read it (Editor's pick)
73. Scalable BEOL Compatible Two-Dimensional Tungsten DiselenideX. Wang, C. M. Smyth, A. Khosravi, C. R. Cormier, J. R. Shallenberger, R. Addou, and R. M. Wallace. Surf. Sci. Spectra 26, 024014 (2019) Read it (Editor's pick)
A. Kozhakhmetov, J. Nasr, Joseph; F. Zhang, K. Xu, N. Briggs, R. Addou, R. Wallace, S. K. Fullerton-Shirey, M. Terrones, S. Das, J. Robinson, 2D Mater. 2D Mater. 7 015029 (2020). Read it
72. 2-D Bismuth Telluride Analyzed by XPS
J. R. Shallenberger, C. M. Smyth, R.Addou, R. M. Wallace
Surf. Sci. Spectra 26, 024011 (2019) Read it
71. Surface and Interfacial Study of Atomic Layer Deposited Al2O3 on MoTe2 and WTe2
Hui Zhu, R. Addou, Q. Wang, Y. Nie, K. Cho, M. J. Kim, R. M. Wallace
Nanotechnology 31, 055704 (2020)
Nanotechnology 31, 055704 (2020)
70. Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3
A. T. Barton, L. A. Walsh, C. M. Smyth, X. Qin, R. Addou, C. Cormier, P. K. Hurley, R. M. Wallace, C. L. Hinkle
ACS Appl. Mater. Interfaces (2019) 11, 35, 32144-32150 Read it
ACS Appl. Mater. Interfaces (2019) 11, 35, 32144-32150 Read it
69. Origins of Fermi Level Pinning Between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Contact Metals: Interface Chemistry and Band Alignment
Christopher M. Smyth, Rafik Addou, Christopher L. Hinkle, Robert M. Wallace
J. Phys. Chem. C (2019) Read it
68. WSe(2-x)Tex Alloys Grown by Molecular Beam Epitaxy
Adam T. Barton, Ruoyu Yue, Lee A. Walsh, Christopher Cormier, Christopher M. Smyth, Rafik Addou, Luigi Colombo, Robert M Wallace, Christopher L. Hinkle
2D Mater. 6 045027 (2019) Read it
67. Engineering the Interface Chemistry for Scandium Electron Contacts in WSe2 Transistors and Diodes.
C. M. Smyth, L. A. Walsh, P. Bolshakov, M. Catalano, M. Schmidt, B. Sheehan, R. Addou, L. Wang, J. Kim, M. J. Kim, C. D. Young, C. L. Hinkle, R. M. Wallace
2D Materials 2DM-104122 (2019) - Read it
66. Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
C.-L. Lo, M. Catalano, A. Khosravi, W. Ge, Y. Ji, D. Y. Zemlyanov, L. Wang, R. Addou, Y. Liu, R. M. Wallace, M. J. Kim, and Z. Chen. Adv. Mter. 1902397 (2019) Read it
65. High-κ Dielectric on ReS2: In-situ Thermal Vs Plasma-Enhanced Atomic Layer Deposition of Al2O3
Ava Khosravi, Rafik Addou, Massimo Catalano, Jiyoung Kim, Robert M.Wallace
Materials 12(7), 1056 (2019)- Read it
64. Engineering the Pd–WSe2 Interface Chemistry for FETs with High Performance Hole Contacts.
C. M. Smyth, L. Walsh, P. Bolshakov, M. Catalano, R. Addou, L. Wang, J. Kim, M. Kim, C. Young, C. L. Hinkle, R. M. Wallace.
ACS Appl. Nano Mater. (2019) - Read it
63. Using Photoelectron Spectroscopy in the Integration of 2D Materials for Advanced Devices.
Rafik Addou and Robert M. Wallace.
J. Electron Spectrosc. Relat. Phenom, 231, 94-103 (2019) - Review Paper Read it
62. Dislocation driven spiral and non-spiral growth in layered chalcogenides: morphology, mechanism, and mitigation.
Y. Nie, A. T. Barton, R. Addou, Y. Zheng, L. A. Walsh, S. M. Eichfeld, R. Yue, C. R. Cormier, C. Zhang, Q. Wang, C. Liang, J. A. Robinson, M. J. Kim, W. G. Vandenberghe, L. Colombo, P. Cha, R. M. Walalce, C. L. Hinkle, K. Cho.
Nanoscale 10, 15023-15034 (2018)
61. High-Mobility Helical Tellurium Field Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.
G. Zhou, R. Addou, Q. Wang, S. Honari, C. R. Cormier, L. Cheng, R. yue, C. M. Smyth, A. Laturia, J. Kim, W. G. Vandenberghe, R. M. Walace, C. L. Hinkle.
Adv. Mater. 1803109 (2018)
60. Chapter 22 - Molecular Beam Epitaxy of Transition Metal Dichalcogenides.
Lee A. Walsh, Rafik Addou, Robert M. Wallace, Christopher L. Hinkle.
Molecular Beam Epitaxy, From Research to Mass Production, Second Edition, 2018, Edit. Mohamed Henini. ISBN 978-0-12-812136-8 - Book Chapter Link
58. One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure.
R. Addou, C. M. Smyth, J.-Y. Noh, Y.-C. Lin, Y. Pan, S. M. Eichfeld, S. Fölsch, J. A. Robinson, K. Cho, R. M. Feenstra, and R. M. Wallace.
2D Mater. 5, 025017 (2018) - Read it
57. Tuning the electronic and photonic properties of monolayer MoS2 via in-situ Re substitutional doping.
K. Zhang, B. Bersch, J. Joshi, R. Addou, C. R. Cormier, C. Zhang, K. Xu, N. Briggs, K. Wang, S. Subramanian, K. Cho, S. Fullerton, R. M. Wallace, P. Vora, J. A. Robinson.
Adv. Funct. Mater. 19, 1706950 (2018) - Read it
55. Covalent Nitrogen Doping in MBE and Bulk WSe2.
A. Khosravi, R. Addou, C.M. Smyth, R. Yue, C.R. Cormier, J. Kim, C.L. Hinkle, R.M. Wallace.
APL Materials 6, 026603 (2018)
52. Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides. R. Yue, Y. Nie, L.A. Walsh, R. Addou, C. Liang, N. Lu, A.T. Barton, H. Zhu, Z. Che, D. Barrera, L. Cheng, Y.J. Chabal, J.W.P. Hsu, J. Kim, M.J. Kim, R.M. Wallace, K. Cho, C.L. Hinkle.
2D Mater. 4 045019 (2017)
51. In Situ Heating Study of 2H-MoTe2 to Mo6Te6 Nanowire Phase Transition.
Q. Wang, H. Zhu, C. Zhang, R. Addou, K. Cho, R. M. Wallace, and M. J. Kim.
Microsc. Microanal. 23 (S1), 1764-1765 (2017)
50. Carbon Assisted Chemical Vapor Deposition of Hexagonal Boron Nitride. A. Ismach, H. Chou, P. Mende, A. Dolocan, R. Addou, S. Aloni, R. Wallace, R. Feenstra, R. S. Ruoff, L. Colombo.
2D Mater. 4, 025117 (2017)
49. Integration of 2D Materials for Advanced Devices: Challenges and Opportunities.
Rafik Addou & Robert M. Wallace.
ECS Trans. 79, 11-20 (2017)
48. WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions.
C. Smyth, R. Addou, S. McDonnell, C. L. Hinkle, R. M. Wallace.
2D Mater. 4, 025084 (2017)
47. Unrealized Air-Stability Mechanism of Two-Dimensional Layered Transition-Metal Dichalcogenide Surfaces.
R. Longo, R. Addou, S. K.C., J. Noh, C. Smyth, D. Barrera, J. Hsu, R. M. Wallace, K. Cho.
2D Mater. 4, 025050 (2017)
46. WTe2 Thin Films Grown by Beam-Interrupted Molecular Beam Epitaxy.
L. Walsh, R. Yue, Q. Wang, A. T. Barton, R. Addou, C. M. Smyth, H. Zhu, J. Kim, L. Colombo, M. J. Kim, R. M. Wallace, C. L. Hinkle.
2D Mater. 4, 025044 (2017)
45. New Mo6Te6 Subnanometer-Diameter Nanowire Phase from 2H-MoTe2.
H. Zhu, Q. Wang, C. Zhang, R. Addou, K. Cho, R. M. Wallace, and M. J. Kim.
Adv. Mater. 1606264 (2017)
43. Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability.
Rafik Addou & Robert M. Wallace.
ACS Appl. Mater. Interfaces 8, 26400–26406 (2016)
42. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.
A. Azcatl, X. Qin, A. Prakash, C. Zhang, L. Cheng, Q. Wang, N. Lu, M. J. Kim, J. Kim, K. Cho, R. Addou, C. L. Hinkle, J. Appenzeller, R. M. Wallace.
Nano Lett. 16, 5437–5443 (2016)
41. Contact Metal-MoS2 Interfacial Reactions and Potential Implications on Device Performance
Christopher M. Smyth, Rafik Addou, Stephen McDonnell, Christopher Hinkle, Robert M. Wallace.
J. Phys. Chem. C 120 (27), 14719–14729 (2016)
40. Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces (Book Chapter #7).
Stephen McDonnell, Rafik Addou, Christopher L. Hinkle, and Robert M. Wallace.
'2D Materials for Nanoelectronics' CRC Press 2016, Pages 163–206. Print ISBN: 978-1-4987-0417-5, DOI: 10.1201/b19623-10
39. Tuning Electronic Transport in Epitaxial Graphene-based van der Waals Heterostructures. Y.-C. Lin, J. Li, S. Barrera, S. Eichfield, Y. Nie, R. Addou, P. C. Mende, R.M. Wallace, K. Cho, R. M. Feenstra, J. Robinson.
Nanoscale 8, 8947-8954 (2016)
38. Recombination kinetics and effects of superacid treatment in sulfur and selenium based transition metal dichalcogenides.
M. Amani, R. Addou, G. H. Ahn, D. Kiriya, P Taheri, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey.
Nano Lett. 16, 2786–2791 (2016)
37. Partially Fluorinated Graphene: Structural and Electrical Characterization.
L. Cheng, S. Jandhyala, G. Mordi, A. T. Lucero, J. Huang, A. Azcatl, R. Addou, Robert M. Wallace, L. Colombo, and J. Kim.
ACS Appl. Mater. Interfaces 8, 5002-5008 (2016)
35. Manganese Doping of Monolayer MoS2: The Substrate is Critical. K. Zhang, S. Feng, J. Wang, A. Azcatl, N. Lu, R. Addou, N. Wang, C. Zhou, J. Lerach, V. Bojan, M. J. Kim, L.-Q. Chen, R. M. Wallace, M. Terrones, J. Zhu and J. A. Robinson. Nano Lett., 15, 6586–6591 (2015)
34. Excellent Wetting Behaviour of Y2O3 on 2D Materials. Rafik Addou, Matthias Batzill, Robert M. Wallace. ECS Trans. 69, 325-336 (2015)
33. Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces. R. Addou, S. McDonnell, D. Barrera, Z. Guo, A. Azcatl, J. Wang, H. Zhu, C. L. Hinkle, M. Quevedo-Lopez, H. N Alshareef, L. Colombo, J. W. P. Hsu, R. M. Wallace. ACS Nano 9, 9124-9133 (2015)
32. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Y.-C. Lin, R. K. Ghosh, R. Addou, N. Lu, S. M. Eichfeld, H. Zhu, M.-Y. Li, X. Peng, M. J. Kim, L.-J. Li, R. M. Wallace, S. Datta, and J. A. Robinson. Nat. Commun., 6, 7311 (2015)
31. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in situ Interface Study. H. Zhu, S. McDonnell, X. Qin, A. Azcatl, L. Cheng, R. Addou, J. Kim, P. D. Ye and R. M. Wallace. ACS Appl. Mater. Interfaces, 7, 13038-13043 (2015)
30. Surface defects on Natural MoS2. R. Addou, L. Colombo and R. M. Wallace. ACS Appl. Mater. Interfaces, 7, 11921-11929 (2015)
29. Transition Metal Dichalcogenide and Hexagonal Boron Nitride Heterostructures Grown by Molecular Beam Epitaxy. A. T. Barton, R. Yue, S. Anwar, H. Zhu, X. Peng, S. McDonnell, N. Lu, R. Addou, L. Colombo, M. J. Kim, R. M. Wallace, and C. L. Hinkle. Microelectron. Eng. 147, 306-309 (2015)
27. Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS2 van der Waals heterostructures. H. Coy-Diaz, J. Avila, C. Chen, R. Addou, M. C. Asensio, M. Batzill. Nano Lett. 15, 1135-1140 (2015)
26. HfO2 on UV-O3 exposed Transition Metal Dichalcogenides: Interfacial Reactions Study. A Azcatl, S. KC, X. Peng, N. Lu, S. McDonnell, X. Qin, F. de Dios, R. Addou, J. Kim, M. J. Kim, K. Cho, and R. M. Wallace. 2D Mater. 2 014004 (2015)
25. Seeding atomic layer deposition of alumina on graphene with yttria. A. Dahal, R. Addou, A. Azcatl, H. Coy-Diaz, Ning Lu, Xin Peng, F. de Dios, J. Kim, M. J. Kim, R. M. Wallace, and M. Batzill. ACS Appl. Mater. Interfaces 7 (3), 2082–2087 (2015)
24. Wet-transfer of chemical vapor deposition graphene onto sulfur protected W(110) surface. A. Dahal, R. Addou, H. Coy-Diaz, and M. Batzill. Surf. Sci. 634, 9-15 (2015)
22. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene. Y.-C. Lin, C.-Y. S. Chang, R. Ghosh, J. Li, H. Zhu, R. Addou, B. Diaconescu, T. Ohta, X. Peng, N. Lu, M. Kim, J. T. Robinson, R. M. Wallace, T. S. Mayer, S. Datta, L.-J. Li, and J. A. Robinson. Nano Lett. 14 (12), 6936-6941 (2014)
21. Impact of Intrinsic Atomic Defects on the Electronic Structure of MoS2 monolayers. S. KC, R. C. Longo, R. Addou, R. M. Wallace and K. Cho. Nanotechnology 25 375703 (2014)
20. Influence of Hydroxyls on Pd-Atom Mobility and Clustering on Rutile-TiO2(011)-2×1. R. Addou, T. P. Senftle , N. O'Connor , M. J. Janik , A. C.T. van Duin, M. Batzill. ACS Nano 8, 6321-6333 (2014)
19. Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments. S. McDonnell, A. Azcatl, R. Addou, C. Gong, C. Battaglia, S. Chuang, K. Cho, A. Javey, R. M. Wallace. ACS Nano 8, 6265-6272 (2014)
18. MoS2 Functionalization for Ultra-thin Atomic Layer Deposited Dielectrics. A. Azcatl, S. McDonnell, S. KC, X. Peng, H. Dong, X. Qin, R. Addou, G. I. Mordi, N. Lu, J. Kim, M. J. Kim, K. Cho, R. M. Wallace. Appl. Phys. Lett. 104, 111601 (2014).
17. Defect-Dominated Doping and Contact Resistance in MoS2. S. McDonnell, R. Addou, C. Buie, R. M. Wallace, C. L. Hinkle. ACS Nano, 8, 2880–2888 (2014).
16. Interface properties of CVD grown graphene transferred on to MoS2(0001). H. Coy-Diaz, R. Addou, M. Batzill. Nanoscale 6, 1071-1078 (2014)
Christopher M. Smyth, Rafik Addou, Christopher L. Hinkle, Robert M. Wallace
J. Phys. Chem. C (2019) Read it
68. WSe(2-x)Tex Alloys Grown by Molecular Beam Epitaxy
Adam T. Barton, Ruoyu Yue, Lee A. Walsh, Christopher Cormier, Christopher M. Smyth, Rafik Addou, Luigi Colombo, Robert M Wallace, Christopher L. Hinkle
2D Mater. 6 045027 (2019) Read it
C. M. Smyth, L. A. Walsh, P. Bolshakov, M. Catalano, M. Schmidt, B. Sheehan, R. Addou, L. Wang, J. Kim, M. J. Kim, C. D. Young, C. L. Hinkle, R. M. Wallace
2D Materials 2DM-104122 (2019) - Read it
66. Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature
C.-L. Lo, M. Catalano, A. Khosravi, W. Ge, Y. Ji, D. Y. Zemlyanov, L. Wang, R. Addou, Y. Liu, R. M. Wallace, M. J. Kim, and Z. Chen. Adv. Mter. 1902397 (2019) Read it
65. High-κ Dielectric on ReS2: In-situ Thermal Vs Plasma-Enhanced Atomic Layer Deposition of Al2O3
Ava Khosravi, Rafik Addou, Massimo Catalano, Jiyoung Kim, Robert M.Wallace
Materials 12(7), 1056 (2019)- Read it
C. M. Smyth, L. Walsh, P. Bolshakov, M. Catalano, R. Addou, L. Wang, J. Kim, M. Kim, C. Young, C. L. Hinkle, R. M. Wallace.
ACS Appl. Nano Mater. (2019) - Read it
Rafik Addou and Robert M. Wallace.
J. Electron Spectrosc. Relat. Phenom, 231, 94-103 (2019) - Review Paper Read it
Y. Nie, A. T. Barton, R. Addou, Y. Zheng, L. A. Walsh, S. M. Eichfeld, R. Yue, C. R. Cormier, C. Zhang, Q. Wang, C. Liang, J. A. Robinson, M. J. Kim, W. G. Vandenberghe, L. Colombo, P. Cha, R. M. Walalce, C. L. Hinkle, K. Cho.
Nanoscale 10, 15023-15034 (2018)
61. High-Mobility Helical Tellurium Field Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.
G. Zhou, R. Addou, Q. Wang, S. Honari, C. R. Cormier, L. Cheng, R. yue, C. M. Smyth, A. Laturia, J. Kim, W. G. Vandenberghe, R. M. Walace, C. L. Hinkle.
Adv. Mater. 1803109 (2018)
60. Chapter 22 - Molecular Beam Epitaxy of Transition Metal Dichalcogenides.
Lee A. Walsh, Rafik Addou, Robert M. Wallace, Christopher L. Hinkle.
Molecular Beam Epitaxy, From Research to Mass Production, Second Edition, 2018, Edit. Mohamed Henini. ISBN 978-0-12-812136-8 - Book Chapter Link
59. Fermi Level Manipulation Through Native Doping in the Topological Insulator Bi2Se3.
L. A. Walsh, A. J. Green, R. Addou, W. Nolting, C. R. Cormier, A. T. Barton, T. R. Mowll, R. Yue, N. Lu, J. Kim, M. J. Kim, V. P. LaBella, C. A. Ventrice, Jr., S. McDonnell, W. G. Vandenberghe, R. M. Wallace, A. Diebold, and C, L Hinkle.
ACS Nano 12, 6310-6318 (2018) - Read it
L. A. Walsh, A. J. Green, R. Addou, W. Nolting, C. R. Cormier, A. T. Barton, T. R. Mowll, R. Yue, N. Lu, J. Kim, M. J. Kim, V. P. LaBella, C. A. Ventrice, Jr., S. McDonnell, W. G. Vandenberghe, R. M. Wallace, A. Diebold, and C, L Hinkle.
ACS Nano 12, 6310-6318 (2018) - Read it
58. One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure.
R. Addou, C. M. Smyth, J.-Y. Noh, Y.-C. Lin, Y. Pan, S. M. Eichfeld, S. Fölsch, J. A. Robinson, K. Cho, R. M. Feenstra, and R. M. Wallace.
2D Mater. 5, 025017 (2018) - Read it
57. Tuning the electronic and photonic properties of monolayer MoS2 via in-situ Re substitutional doping.
K. Zhang, B. Bersch, J. Joshi, R. Addou, C. R. Cormier, C. Zhang, K. Xu, N. Briggs, K. Wang, S. Subramanian, K. Cho, S. Fullerton, R. M. Wallace, P. Vora, J. A. Robinson.
Adv. Funct. Mater. 19, 1706950 (2018) - Read it
56. Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials.
Y.-C. Lin, B. J ariwala, B.M. Bersch, K. Xu, Y. Ni, B. Wang, S.M. Eichfeld, X. Zhang, T.H. Choudhury, Y. Pan, R. Addou, C.M. Smyth, J. Li, K. Zhang, A. Haque, S. Fölsch, R.M. Feenstra, R.M. Wallace, K. Cho, S.K. Fullerton-Shire, J.M. Redwing, J.A. Robinson.
ACS Nano 12, 965-975 (2018)
Y.-C. Lin, B. J ariwala, B.M. Bersch, K. Xu, Y. Ni, B. Wang, S.M. Eichfeld, X. Zhang, T.H. Choudhury, Y. Pan, R. Addou, C.M. Smyth, J. Li, K. Zhang, A. Haque, S. Fölsch, R.M. Feenstra, R.M. Wallace, K. Cho, S.K. Fullerton-Shire, J.M. Redwing, J.A. Robinson.
ACS Nano 12, 965-975 (2018)
55. Covalent Nitrogen Doping in MBE and Bulk WSe2.
A. Khosravi, R. Addou, C.M. Smyth, R. Yue, C.R. Cormier, J. Kim, C.L. Hinkle, R.M. Wallace.
APL Materials 6, 026603 (2018)
54. Defects and surface structural stability of MoTe2 under vacuum annealing.
H. Zhu, Q. Wang, L. Cheng, R. Addou, J. Kim, Moon J. Kim, R. M. Wallace.
ACS Nano 11, 11005-11014 (2017)
H. Zhu, Q. Wang, L. Cheng, R. Addou, J. Kim, Moon J. Kim, R. M. Wallace.
ACS Nano 11, 11005-11014 (2017)
53. Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy.
H. Dong, C. Gong, R. Addou, S. McDonnell, A. Azcatl, X. Qin, W. Wang, W.-H. Wang, C.L. Hinkle, and R.M. Wallace.
ACS Appl. Mater. Interfaces 9, 38977-38983 (2017)
H. Dong, C. Gong, R. Addou, S. McDonnell, A. Azcatl, X. Qin, W. Wang, W.-H. Wang, C.L. Hinkle, and R.M. Wallace.
ACS Appl. Mater. Interfaces 9, 38977-38983 (2017)
52. Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides. R. Yue, Y. Nie, L.A. Walsh, R. Addou, C. Liang, N. Lu, A.T. Barton, H. Zhu, Z. Che, D. Barrera, L. Cheng, Y.J. Chabal, J.W.P. Hsu, J. Kim, M.J. Kim, R.M. Wallace, K. Cho, C.L. Hinkle.
2D Mater. 4 045019 (2017)
51. In Situ Heating Study of 2H-MoTe2 to Mo6Te6 Nanowire Phase Transition.
Q. Wang, H. Zhu, C. Zhang, R. Addou, K. Cho, R. M. Wallace, and M. J. Kim.
Microsc. Microanal. 23 (S1), 1764-1765 (2017)
50. Carbon Assisted Chemical Vapor Deposition of Hexagonal Boron Nitride. A. Ismach, H. Chou, P. Mende, A. Dolocan, R. Addou, S. Aloni, R. Wallace, R. Feenstra, R. S. Ruoff, L. Colombo.
2D Mater. 4, 025117 (2017)
49. Integration of 2D Materials for Advanced Devices: Challenges and Opportunities.
Rafik Addou & Robert M. Wallace.
ECS Trans. 79, 11-20 (2017)
48. WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions.
C. Smyth, R. Addou, S. McDonnell, C. L. Hinkle, R. M. Wallace.
2D Mater. 4, 025084 (2017)
47. Unrealized Air-Stability Mechanism of Two-Dimensional Layered Transition-Metal Dichalcogenide Surfaces.
R. Longo, R. Addou, S. K.C., J. Noh, C. Smyth, D. Barrera, J. Hsu, R. M. Wallace, K. Cho.
2D Mater. 4, 025050 (2017)
46. WTe2 Thin Films Grown by Beam-Interrupted Molecular Beam Epitaxy.
L. Walsh, R. Yue, Q. Wang, A. T. Barton, R. Addou, C. M. Smyth, H. Zhu, J. Kim, L. Colombo, M. J. Kim, R. M. Wallace, C. L. Hinkle.
2D Mater. 4, 025044 (2017)
45. New Mo6Te6 Subnanometer-Diameter Nanowire Phase from 2H-MoTe2.
H. Zhu, Q. Wang, C. Zhang, R. Addou, K. Cho, R. M. Wallace, and M. J. Kim.
Adv. Mater. 1606264 (2017)
44. Electronic properties of MoS2/MoOx Interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts.S. K.C., R. C. Longo, R. Addou, R. M. Wallace, and K. Cho.
Scientific Reports 6, 33562 (2016)
Scientific Reports 6, 33562 (2016)
43. Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability.
Rafik Addou & Robert M. Wallace.
ACS Appl. Mater. Interfaces 8, 26400–26406 (2016)
42. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.
A. Azcatl, X. Qin, A. Prakash, C. Zhang, L. Cheng, Q. Wang, N. Lu, M. J. Kim, J. Kim, K. Cho, R. Addou, C. L. Hinkle, J. Appenzeller, R. M. Wallace.
Nano Lett. 16, 5437–5443 (2016)
41. Contact Metal-MoS2 Interfacial Reactions and Potential Implications on Device Performance
Christopher M. Smyth, Rafik Addou, Stephen McDonnell, Christopher Hinkle, Robert M. Wallace.
J. Phys. Chem. C 120 (27), 14719–14729 (2016)
40. Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces (Book Chapter #7).
Stephen McDonnell, Rafik Addou, Christopher L. Hinkle, and Robert M. Wallace.
'2D Materials for Nanoelectronics' CRC Press 2016, Pages 163–206. Print ISBN: 978-1-4987-0417-5, DOI: 10.1201/b19623-10
39. Tuning Electronic Transport in Epitaxial Graphene-based van der Waals Heterostructures. Y.-C. Lin, J. Li, S. Barrera, S. Eichfield, Y. Nie, R. Addou, P. C. Mende, R.M. Wallace, K. Cho, R. M. Feenstra, J. Robinson.
Nanoscale 8, 8947-8954 (2016)
38. Recombination kinetics and effects of superacid treatment in sulfur and selenium based transition metal dichalcogenides.
M. Amani, R. Addou, G. H. Ahn, D. Kiriya, P Taheri, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey.
Nano Lett. 16, 2786–2791 (2016)
37. Partially Fluorinated Graphene: Structural and Electrical Characterization.
L. Cheng, S. Jandhyala, G. Mordi, A. T. Lucero, J. Huang, A. Azcatl, R. Addou, Robert M. Wallace, L. Colombo, and J. Kim.
ACS Appl. Mater. Interfaces 8, 5002-5008 (2016)
36. Near-Unity Photoluminescence Quantum Yield in MoS2. M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. Madhvapathy, R. Addou, S. KC, M. Dubey, S.-C. Lee, Jr-H. He, J. Ager, X. Zhang, E. Yablonovitch, K. Cho, R. M. Wallace, A. Javey. Science 350, 1065-1068 (2015)
35. Manganese Doping of Monolayer MoS2: The Substrate is Critical. K. Zhang, S. Feng, J. Wang, A. Azcatl, N. Lu, R. Addou, N. Wang, C. Zhou, J. Lerach, V. Bojan, M. J. Kim, L.-Q. Chen, R. M. Wallace, M. Terrones, J. Zhu and J. A. Robinson. Nano Lett., 15, 6586–6591 (2015)
34. Excellent Wetting Behaviour of Y2O3 on 2D Materials. Rafik Addou, Matthias Batzill, Robert M. Wallace. ECS Trans. 69, 325-336 (2015)
33. Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces. R. Addou, S. McDonnell, D. Barrera, Z. Guo, A. Azcatl, J. Wang, H. Zhu, C. L. Hinkle, M. Quevedo-Lopez, H. N Alshareef, L. Colombo, J. W. P. Hsu, R. M. Wallace. ACS Nano 9, 9124-9133 (2015)
32. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Y.-C. Lin, R. K. Ghosh, R. Addou, N. Lu, S. M. Eichfeld, H. Zhu, M.-Y. Li, X. Peng, M. J. Kim, L.-J. Li, R. M. Wallace, S. Datta, and J. A. Robinson. Nat. Commun., 6, 7311 (2015)
31. Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in situ Interface Study. H. Zhu, S. McDonnell, X. Qin, A. Azcatl, L. Cheng, R. Addou, J. Kim, P. D. Ye and R. M. Wallace. ACS Appl. Mater. Interfaces, 7, 13038-13043 (2015)
30. Surface defects on Natural MoS2. R. Addou, L. Colombo and R. M. Wallace. ACS Appl. Mater. Interfaces, 7, 11921-11929 (2015)
29. Transition Metal Dichalcogenide and Hexagonal Boron Nitride Heterostructures Grown by Molecular Beam Epitaxy. A. T. Barton, R. Yue, S. Anwar, H. Zhu, X. Peng, S. McDonnell, N. Lu, R. Addou, L. Colombo, M. J. Kim, R. M. Wallace, and C. L. Hinkle. Microelectron. Eng. 147, 306-309 (2015)
28. Surface and interfacial research of half cycle atomic layer deposited Al2O3 on black phosphorus. H. Zhu, X. Qin, A. Azcatl, R. Addou, S. McDonnell, P. D. Ye, and R. M. Wallace. Microelectron. Eng. 147, 1-4 (2015)
27. Direct observation of interlayer hybridization and Dirac relativistic carriers in graphene/MoS2 van der Waals heterostructures. H. Coy-Diaz, J. Avila, C. Chen, R. Addou, M. C. Asensio, M. Batzill. Nano Lett. 15, 1135-1140 (2015)
26. HfO2 on UV-O3 exposed Transition Metal Dichalcogenides: Interfacial Reactions Study. A Azcatl, S. KC, X. Peng, N. Lu, S. McDonnell, X. Qin, F. de Dios, R. Addou, J. Kim, M. J. Kim, K. Cho, and R. M. Wallace. 2D Mater. 2 014004 (2015)
25. Seeding atomic layer deposition of alumina on graphene with yttria. A. Dahal, R. Addou, A. Azcatl, H. Coy-Diaz, Ning Lu, Xin Peng, F. de Dios, J. Kim, M. J. Kim, R. M. Wallace, and M. Batzill. ACS Appl. Mater. Interfaces 7 (3), 2082–2087 (2015)
24. Wet-transfer of chemical vapor deposition graphene onto sulfur protected W(110) surface. A. Dahal, R. Addou, H. Coy-Diaz, and M. Batzill. Surf. Sci. 634, 9-15 (2015)
23. HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by MBE. R. Yue, A. T. Barton, H. Zhu, A. Azcatl, L. F. Pena, J. Wang, X. Peng, N. Lu, L. Cheng, R. Addou, S. McDonnell, L. Colombo, J. W. P. Hsu, J. Kim, M. J. Kim, R. M. Wallace, C. L. Hinkle. ACS Nano 9, 474-480 (2014)
22. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene. Y.-C. Lin, C.-Y. S. Chang, R. Ghosh, J. Li, H. Zhu, R. Addou, B. Diaconescu, T. Ohta, X. Peng, N. Lu, M. Kim, J. T. Robinson, R. M. Wallace, T. S. Mayer, S. Datta, L.-J. Li, and J. A. Robinson. Nano Lett. 14 (12), 6936-6941 (2014)
21. Impact of Intrinsic Atomic Defects on the Electronic Structure of MoS2 monolayers. S. KC, R. C. Longo, R. Addou, R. M. Wallace and K. Cho. Nanotechnology 25 375703 (2014)
20. Influence of Hydroxyls on Pd-Atom Mobility and Clustering on Rutile-TiO2(011)-2×1. R. Addou, T. P. Senftle , N. O'Connor , M. J. Janik , A. C.T. van Duin, M. Batzill. ACS Nano 8, 6321-6333 (2014)
19. Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments. S. McDonnell, A. Azcatl, R. Addou, C. Gong, C. Battaglia, S. Chuang, K. Cho, A. Javey, R. M. Wallace. ACS Nano 8, 6265-6272 (2014)
18. MoS2 Functionalization for Ultra-thin Atomic Layer Deposited Dielectrics. A. Azcatl, S. McDonnell, S. KC, X. Peng, H. Dong, X. Qin, R. Addou, G. I. Mordi, N. Lu, J. Kim, M. J. Kim, K. Cho, R. M. Wallace. Appl. Phys. Lett. 104, 111601 (2014).
17. Defect-Dominated Doping and Contact Resistance in MoS2. S. McDonnell, R. Addou, C. Buie, R. M. Wallace, C. L. Hinkle. ACS Nano, 8, 2880–2888 (2014).
16. Interface properties of CVD grown graphene transferred on to MoS2(0001). H. Coy-Diaz, R. Addou, M. Batzill. Nanoscale 6, 1071-1078 (2014)
15. Charge doping of graphene in metal/graphene/dielectric sandwich structures evaluated by C-1s core level photoemission spectroscopy. A. Dahal, R. Addou, H. Coy-Diaz, J. Lallo and M. Batzill. APL Mat. 1, 042107 (2013)
14. Interface between graphene and SrTiO3(001) investigated by scanning tunneling microscopy and photoemission. H. Coy-Diaz, R. Addou, M. Batzill. J. Phys. Chem. C, 117, 21006-210013 (2013)
13. Combined surface science and DFT study of adsorption of dinitrotoluene (2,4-DNT) on rutile TiO2(110): Molecular scale insight for sensing of explosives. J. Tao, Q. Cuan, S. Halpegamage, R. Addou, X-Q. Gong and M. Batzill.
J. Phys. Chem. C, 117, 16468-16476 (2013)
J. Phys. Chem. C, 117, 16468-16476 (2013)
12. Preparation and characterization of Ni(111)/graphene/Y2O3 heterostructures. A. Dahal, H. Coy, R. Addou, J. Lallo, E. Sutter, M. Batzill. J. Appl. Phys. 113, 194305 (2013)
11. Grain boundaries in self-ordered terephthalic acid (TPA) monolayers on quasi freestanding polycrystalline graphene supported on Pt(111). Rafik Addou & Matthias Batzill. Langmuir 29 (21) 6354-6360 (2013)
10. Structural investigation of Pb adsorption on the (010) surface of the orthorhombic T-Al3(Mn, Pd) crystal. R. Addou, A. K. Shukla, M. Heggen, M. Feuerbacher, O. Groening, V. Fournée, J. M. Dubois and J. Ledieu. Surf. Sci. 611, 74-79 (2013)
9. Growth of a two dimensional dielectric monolayer on quasi-freestanding graphene. R. Addou, A. Dahal and M. Batzill. Nat. Nanotechnol. 8, 41-45 (2013)
8. Atomic and electronic structure of graphene/Sn-Ni(111) and graphene/Sn-Cu(111) surface alloy interfaces. L. Adamska, R. Addou, M. Batzill and I.I. Oleynik. Appl. Phys. Lett. 101 051602 (2012)
7. Graphene monolayer rotation on Ni(111) facilitates bilayer graphene growth. A. Dahal, R. Addou, P. Sutter and M. Batzill. Appl. Phys. Lett. 100 241602 (2012)
6. Graphene on ordered Ni-alloy surfaces formed by metal (Sn, Al) intercalation between graphene/Ni(111). R. Addou, A. Dahal and M. Batzill. Surf. Sci. 606 1108 (2012)
5. Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition. R. Addou, A. Dahal, P. Sutter and M. Batzill. Appl. Phys. Lett. 100 021601 (2012)
4. Pseudomorphy, surface alloys and the role of the elementary clusters on the domain orientations in the Cu/Al13Co4 (100) system. R. Addou, A. K. Shukla, M.-C. de Weerd, P. Gille, R. Widmer, O. Groening, V. Fournée, J. M. Dubois and J. Ledieu. J. Phys.: Condens. Matter 23 (43) 435009 (2011)
3. Lead adsorption on the Al13Co4 (100) surface: heterogeneous nucleation and pseudomorphic growth. R. Addou, A. K. Shukla, S. A. Alarcon Villaseca, E. Gaudry, T. Deniozou, M. Heggen, M. Feuerbacher, R. Widmer, O. Groening, V. Fournée, J. M. Dubois and J. Ledieu. New J. Phys. 13 103011 (2011)
2. Structure of the (010) surface of the orthorhombic complex metallic alloy T-Al3(Mn, Pd). T. Deniozou, R. Addou, A. K. Shukla, M. Krajci, J. Hafner, M. Heggen, M. Feuerbacher, R. Widmer, O. Groening, V. Fournée, J. M. Dubois and J. Ledieu. Phys. Rev. B 81 125418 (2010)
1. Structure Investigation of the (100) surface of the orthorhombic Al13Co4 crystal. R. Addou, E. Gaudry, T. Deniozou, M. Heggen, M. Feuerbacher, P. Gille, R. Widmer, O. Groening, V. Fournée, Y. Grin, J. M. Dubois, and J. Ledieu. Phys. Rev. B 80 014203 (2009)
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"Complex Metallic Alloy Surfaces: Structure, Properties and Nanostructured Surface"
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