Postdoctoral Position in Materials Science and Engineering at UT Dallas

The Addou Lab in the Department of Materials Science and Engineering at the University of Texas at Dallas is seeking a highly qualified postdoctoral researcher. This position is ideal for candidates with a strong background in surface science and ultra-high vacuum (UHV) systems, and experience in thin film technology and advanced materials.

Qualifications:

  • Ph.D. in Materials Science, Engineering, Physics, Chemistry, or a related field.
  • Minimum of 3 years of hands-on experience with UHV systems, including STM, XPS, UPS, LEED/RHEED.
  • Proficiency in thin film deposition techniques, such as ALD, PVD, and MBE.
  • Expertise with 2D materials, nanomaterials, or other emerging materials.

Application Process: Only candidates meeting these qualifications are encouraged to apply through the UTD jobs portal https://jobs.utdallas.edu/postings/27939

New UG course on Electronic, Optical and Magnetic (EOM) Properties of Materials this spring MSEN 3315

Materials Science and Engineering at UT Dallas is offering a course on Electronic, Optical and Magnetic Properties of Materials this spring. MSEN 3315 provides the fundamentals of materials properties for electronic, optical and magnetic applications. The course covers elementary quantum physics, modern solid-state theory, electrical and thermal conduction, semiconductors and devices, dielectrics, magnetic and optical materials properties. Students will gain an understanding of the primary characterization methods used to study and measure the electrical, optical and physical properties.



Leading Interface and Surface Science Research at UT Dallas

Starting new chapter with Addou Lab in interface and surface science with focus in nano electric and emerging lab. Excited to announce that I've started a new role as an Assistant Professor in the Department of Materials Science and Engineering at the University of Texas at Dallas.



Co-organizing the Nano and 2D Materials symposium at PacSurf 2024

I am very pleased to co-organize the Nano and 2D Materials Symposium at PacSurf 2024, which will be held in Hawaii from December 8-12. This event promises to be an excellent platform for researchers to discuss and share their latest findings in the field of surfaces, thin films, and interfaces.

We invite researchers to submit their abstracts by August 9, 2024. This is a fantastic opportunity to interact with leading experts and contribute to advancing our understanding of nano and 2D materials.

For more information, visit the PacSurf 2024 website



New Paper! Fermi Level Pinning on Tungsten Dichalcogenides

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides
Xinglu Wang,Yaoqiao Hu, Seong Yeoul Kim, Rafik Addou, Kyeongjae Cho, and Robert M. Wallace
https://doi.org/10.1021/acsnano.3c06494

Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties and potential for application in next-generation electronic devices. However, strong Fermi level (EF) pinning manifests at the metal/W-TMD interfaces, which could tremendously restrain the carrier injection into the channel. In this work, we illustrate the origins of EFpinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. We conclude that the origins of EF pinning at a covalent contact metal/W-TMD interface, such as Ni/W-TMDs, can be attributed to defects, impurities, and interface reaction products. In contrast, for a van der Waals contact metal/TMD system such as Ag/W-TMDs, the primary factor responsible for EF pinning is the electronic modification of the TMDs resulting from the defects and impurities with the minor impact of metal-induced gap states. The potential strategies for carefully engineering the metal deposition approach are also discussed. This work unveils the origins of EF pinning at metal/TMD interfaces experimentally and theoretically and provides guidance on further enhancing and improving the device performance